2013 IEEE International Electron Devices Meetingсборник
Статьи, опубликованные в сборнике
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2013
Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>)
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Cheng Ran,
Liu Bin,
Guo Pengfei,
Yang Yue,
Zhou Qian,
Gong Xiao,
Dong Yuan,
Tong Yi,
Bourdelle Konstantin,
Daval Nicolas,
Delprat Daniel,
Nguyen Bich-Yen,
Augendre Emmanuel,
Yeo Yee-Chia
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в сборнике 2013 IEEE International Electron Devices Meeting, место издания IEEE
DOI
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2013
Demonstration of improved transient response of inverters with steep slope strained Si NW TFETs by reduction of TAT with pulsed I-V and NW scaling
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Knoll L.,
Zhao Q.T.,
Nichau A.,
Richter S.,
Luong G.V.,
Trellenkamp S.,
Schafer A.,
Selmi L.,
Bourdelle K.K.,
Mantl S.
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в сборнике 2013 IEEE International Electron Devices Meeting, место издания IEEE
DOI