2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technologyсборник

Статьи, опубликованные в сборнике

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• • 2010 High mobility Si/Si<inf>0.5</inf>Ge<inf>0.5</inf>/strained SOI p-MOSFET with HfO<inf>2</inf> /TiN gate stack
  • Zhang B.
  • в сборнике 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, место издания IEEE DOI
• • 2010 MOSFETs with high mobility channel materials and higher-k/metal gate stack
  • в сборнике 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, место издания IEEE DOI