ИСТИНА |
Войти в систему Регистрация |
|
ИСТИНА ИНХС РАН |
||
Thin films of Se/Bi heterostructure were obtained by the by thermal vaporization of Se and Bi powders in a vacuum camera. A focused He-Ne laser beam is shown to cause local darkening of Se/Bi heterostructure at incident power densities above 3.5 kW/cm2. Data obtained from Raman spectra at 632.8 nm before and after laser treatment indicate that the darkening is accompanied by Bi2Se3 formation.