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Lead selenide is a narrow gap semiconductor with a direct energy gap of 165 meV at zero temperature. In present work, photoelectric and transport properties are studied for as-grown and oxidized nanocrystalline PbSe films. Charge transport mechanisms of nanocrystalline films depend on properties of grains as well as properties of grain boundaries and processes which occur on grain surfaces. Contribution to conductivity from different elements of the structure may vary depending on the grain size, oxidation, doping and external factors.