ИСТИНА

The intrinsic nanoscale point defects generating in the crystal lattice of ZnSe during the crystal growth and annealing strongly influence on chemical activity both the surface and the solid. This is also true for the doping process as well as the dopant solubility. ZnSe:Fe laser fabrication deals with the problem of Fe distribution control in ZnSe crystal. To manage Fe concentration we used a chemical coprecipitation of ZnS/ZnSe and FeSe from solution on a polished surface of CVD-grown ZnSe crystals with different nonstoichiometry. The influence of precipitation conditions on the film surface morphology was analyzed by SEM. Subsequent annealing under controlled Se/Zn partial pressure and further high-temperature gas-static pressing (HIP) processing resulted to the controlled profile of Fe concentration up to 1020 cm-3. As a result of the control of the intrinsic point defects, nonstoichiometry, surface morphology, and Fe-dopant profile we achieved the large quantities of differential efficiency of the produced ZnSe:Fe2 laser as ηslope = 50%. The research was financially supported by the Russian Science Foundation grant № 15-13-10028П.