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On the Nature of Photo-Induced Defects and Recombination Mechanism in Light Soaked a-Si:H Filmsдоклад на конференции
- Авторы: Звягин И.П., Ормонт Н.Н., Курова И.А.
- Международная Конференция : 15th International Conf.of Amorphous Semiconductors.ICAS15
- Даты проведения конференции: 1993
- Тип доклада: не указан
- Докладчик: не указан
- Место проведения: Cambridge
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Аннотация доклада:
Results of measurements of the temperature dependence of the photocoductivity and intensity-current characteristics of undoped a-Si:H films light-soaked at various temperatures are presented. The observations support the assumption of the introduction of t-centers in addition of the conventional dangling bonds playing an important role in the recombination. The electronic energy spectrum and recombination properties of intimate dangling-bond pairs are discussed and it is argued that such complexes may be the t-centers introduced at light soaking.
- Добавил в систему: Ормонт Наталия Николаевна