ИСТИНА

Many silicon devices, including highpower MOS transistors, require to apply technologies to control the lifetime of minor charge carriers (tr). As a result, one utilizes thermodiffusion, radiation, and combined methods. In practice the most widely utilized method is a treatment by accelerated electrons and protons. The accelerated electrons allow to form electrically active defects at the treatment of few wafers, located as few layers, relatively uniformly. The protons allow to implement a local formation of hidden recombinational layers inside of device layers at significant depth which is especially important for deep diffusion structures