ИСТИНА

HgCdTe solid solutions (MCT) are one of the main materials of infrared optoelectronics. Modern technologies of molecular beam epitaxy (MBE) made it possible to reduce the composition fluctuations that had impeded the advancement of MCT to the far infrared and terahertz ranges, the development of which is one of the most important scientific and technical problems due to the promising use of long-wave radiation detectors in medical diagnostics, counter-terrorism systems and many other applications. However, even in high-quality structures there are impurities and defects that can significantly affect the properties of the semiconductor. We conducted series of experiments to determine the optical (photoconductivity) and transport (hall effects, resistivity) properties of solid solutions of MCT at different temperatures (4.2–300 K) in order to determine the energy spectrum of impurity states. Also, we constructed a simple theoretical model that describes the temperature evolution of impurity features, it allows us to estimate the acceptor concentration in structure, based on experimental data.