ИСТИНА

Since silicon is still the main material of electronics the defect formation that occurs in it under the action of ion irradiation, has been sufficiently investigated. However, in the process of the defect formation in the silicon films some features can be observed that are associated either with the presence of a sharp boundary between the si film and the substrate or the profile of the embedded particles. The defect formation in semiconductors under ion irradiation depends on the type of the embedded ion, energy and dose, as well on the temperature at which the material is irradiated. At this work Irradiation was performed with ions Si+, Ar+ with energies from 100 to 300 keV at a wide range of temperatures (from liquid nitrogen temperatures up to +1500). Dose ranged about from 1014 to 1017 ion/cm2. Before and after the irradiation of the experimental samples were studied via Rutherford backscattering, electronic and Raman spectrometry. It has been shown that compared to the massive silicon, silicon films on sapphire are destroyed at much lower fluence and current density of ion irradiation. It has been established that the temperature affects the distribution profile of the embedded particles. The study was financially supported by the RFBR within the framework of scientific project No. 15-07-99656 А.