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Topological insulators can be used for manufacturing photoconductive antennas as well as semiconductor materials, for effective generation and detection of terahertz radiation. This work presents results of study of the radiating and detecting properties of antennas based on thin films of topological insulators Bi2-xSbxTe3-ySey with different chemical and physical characteristics. It was shown that BSTS topological insulators in the form of island films with a thickness of several tens of nanometers can generate effectively in terahertz antennas with a dynamic range of more than 65 dB. The relaxation mechanisms for hot carriers, which determine efficiency of the generation and detection of THz radiation in topological insulators, will be discussed.