ИСТИНА

Gd3Al2Ga3O12:Ce3+ (GAGG:Ce) crystals are promising for scintillator applications in medicine and highenergy physics. The considerable disadvantage of this crystal is that upon the excitation by ionizing radiation beside the typical for the 5d-4f Ce3+ emission decay component (~60 ns) additional slow decay components with τ > 200 ns emerge in its scintillation response. The presence of slow decay components is related to the intermediate localization of charge carriers at traps during the energy transfer process from the host to emission centers as well as to energy migration via the Gd sublattice. The method of bandgap engineering allows fine tailoring of physical properties including scintillation decay times by gradual change of crystal composition. Here we present the study of the modification of energy transfer processes caused by partial substitution of Al and Ga cations by Sc in GAGG:Ce crystals.