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Effects of negative and positive persistent photoconductivity are found in the p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructure with normal and inverted heterointerfases at low temperatures 1.7÷160 K. The negative photoconductivity is explained by the existence of a layer of donor-like traps with a low thermal activation barrier of about 6±0.9 meV near the heterointerface. Positive persistent photoconductivity is associated with electron traps characterized by the magnitude of the thermal activation barrier 22±2 meV at the inverted heterointerface. The effect of uniaxial compression on the magnitude of thermal activation barriers was not found.