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Results of numerical simulation of free carriers’ dynamics under femtosecond laser excitation in the mid-IR range (4.6 μm) in the bulk of silicon are presented. The electrons heating up to 8 eV as well as the promotion of supercritical carrier concentration (8.5·10^21 cm^-3) is demonstrated. These are critical to achieve the energy threshold (4.2 kJ/cm^3) for melting silicon crystal lattice.