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This work present the implementation of a photoelectric synapse based on semiconductor nanocrystallite (ZnO, In2O3, WO3). By choosing the type of nanocrystallite and manufacturing parameters, we obtain neuromorphic elements with variable properties. In the form of a synaptic signal, light pulses are used at a wavelength of 405 nm. The change in the conductivity of a nanocrystallite upon irradiation with light corresponds to the change in the resistance on the postneuron.