ИСТИНА

AlOx/(p+nn+)Cz-Si/IFO and ITO/AlOx/(p+nn+)Cz-Si/IFO solar cell structures have been fabricated from n-type Czochralski (Cz) silicon wafers through boron and phosphorus diffusion for producing the p+-Si emitter and n+-Si layer, respectively. The In2O3:F (IFO) (IFO), AlOx, and In2O3:Sn (ITO) films have been grown by ultrasonic spray pyrolysis at 475 °С, 330 °С, and 375 °С, respectively. We have studied the effects of the AlOx film thickness in the range 27–108 nm, the heat treatment time at 330 °С in an Ar + 5% O2 atmosphere containing vapor of a 2 M H2O solution in methanol, and the sheet resistance of the p+-Si emitter in the range 28–133 Ω/□ (varied through layer-by-layer chemical etching) on the internal quantum efficiency (IQE) spectrum and photocurrent JIQE (evaluated from the IQE spectrum and AM 1.5G solar spectrum (ASTM Standard G173-03)) of the structures and their photovoltage and pseudo-fill factor evaluated from Suns-Voc Suns—Voc measurements. The results demonstrate that the p+-emitter passivation efficiency increases with increasing AlOx film thickness and as a result of heat treatment. The optimal sheet resistance of the emitter is ~65 Ω/□. The pseudo-efficiency of the ITO/AlOx/(p+nn+)Cz-Si/IFO structures was 20.2% under front illumination.