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We have observed positive photoconductivity under the action of microwave radiation in thick Hg1-xCdxTe film with x < 0.16, which corresponds to the inverted band structure and, consequently, to the topological phase. The effect appears at low temperatures T < 7 K. It is shown that one of the possible reasons for the positive photoconductivity appearance in the topological state film is the bolometric effect. An alternative mechanism presumes heating of electrons in the film bulk by the microwave radiation followed by their diffusion to the interface area with the trivial buffer, where they acquire higher mobility, which leads to the positive photoconductivity. Measurements of the photoconductivity kinetics may provide arguments in favor of one of the possibilities above.