ИСТИНА

Indium-Fluorine-Oxide (IFO) films were deposited by pyrosol method on specially made test sub-strates of textured crystalline silicon. Oxygen content carrier gas composition (Ar+O2) and F/In ratio in film-forming solution were varied. Photovoltages of IFO/Si heterojunctions both for p- and n-type silicon, photovoltage of IFO/(n+pp+)Si structures with diffused emitter as well as the resistance of IFO/(n+)Si contact have been studied. Ob-tained results show that both F/In ratio and oxygen content have a profound impact on the properties of non-stoichiometric SiO2-x layer which is formed at TCO/Si interface. In particular fluorine promotes while oxygen inhibits generation of oxygen vacancies. Consequently its dielectric and passivation properties as well as built-in positive charge and correspondingly barrier height at IFO/p-Si junction considerably change. Laminated Grid solar cells with IFO/(pp+)Si/ITO structure were prepared using optimized deposition conditions of IFO film developed in this work. Conversion efficiency 15.2% with open circuit voltage 591 mV were achieved – noticeably higher values compared with previous results (14.0% with 554 mV). It is concluded that there is the potential to further increase the conversion efficiency of silicon solar cells with transparent electrodes of IFO film.