ИСТИНА

The increase of LG cells front efficiency from 16,3% (confirmed) to ~17.7% (not confirmed) is obtained. This gain is achieved dew to the use of a little shallower emitter (60W/ after diffusion compared with previously used 26W/ ) fabricated by diffusion at reduced (T=Tstandard-30C) temperature together with etch-back of the emitter up to the optimal value ~100W/ . The optimal sheet resistance is linked with doping profile curve. Taking into account that high-efficient silicon cells have emitter sheet resistance ~ 250W/ , it may be concluded that there is the potential of further improvement of LG cells. This first result supports the statement that increase of LG cell efficiency can be obtained through the optimization of (n+np+)Si structure specially for LG cell design.