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This paper reports a substantial improvement in rear efficiency achieved in bifacial Laminated Grid silicon solar cell. The increase of rear short-circuit current and, consequently, of rear efficiency is achieved by oxidation of standard (n+np+)Si structures and also by applying of In2O3:F film as antireflecting coating on the rear (n+Si) surface instead of ITO film. Record combination of front (16.3%) and rear (14.5%) efficiencies for this type of cell have been achieved (as measured by Sandia National Laboratories), remarkably higher than corresponding results obtained with the help of screen-printing process (13.4% and 11.5%, respectively).