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Multilayer hybrid structures with thin superconductive layers are actively studied for the needs of superconducting electronics. Such structures are widely used as spin-valves, π-shifters, phase batteries, and non-volatile memory and logic elements [1]. In this case, the properties of the device mainly depend on the thickness and material parameters of the ferromagnetic layer, which brings the phase shift of the order parameter. However, the properties of such structures also depend on the thickness of the superconducting layers. When the thickness of the intermediate superconducting layers decreases to a value on the order of the coherence length, the behavior of the structures often changes qualitatively [2]. A significant number of devices can be designed on this effect. On the one hand, changing the boundary conditions near the ferromagnetic layer and phase restoration in s-layer can cause a shift in the 0-π transition [3]. On the other hand, in some cases, a thin superconducting layer can act as a charge imbalance accumulator and change the performance of the Josephson junctions [4]. Thin superconducting layers make it possible to control the critical current in tunneling Josephson junctions, both due to the transition between 0 and pi states [5], and due to the formation of superconducting phase domains [6]. Thus, the use of thin superconducting layers in hybrid structures opens up wide possibilities for modifying existing devices and creating fundamentally new operational principles. The work was supported by the Russian Science Foundation grant 22-79-10018.