ИСТИНА

The modern technology of micro- and nanoelectronics involves great number of steps, e.g. pattern transfer, where Reactive Ion Etching (RIE) in rf plasma reactors is widely used. To control the etching process, ion flux and energy distribution should be managed precisely. However, measurements of them during the process in the real-time operation mode are impossible. Nevertheless, if virtual sensor of ion flux and energy can be developed, such a sensor would allow monitoring ion energy distribution (IED) without direct measurements during plasma processing. This paper is just devoted to creation of such IED virtual diagnostics. Virtual diagnostics of ion energy spectrum on the surface of rf biased electrode is based on model calculations using in-situ measured discharge parameters. The results of IED virtual diagnostics were compared with the data, obtained by Retarded Field Energy Analyzer (RFEA) in Ar- and H2-plasma under low-pressure rf plasma conditions. A good agreement between model and experimental data lets us make a conclusion about successful applicability of IED virtual diagnostics to in-situ monitoring the IED at the electrode surface in RIE reactors.