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Soviet Physics Semiconductors-Ussr
журнал
Индексирование: нет
Период активности журнала: не указан
Добавил в систему:
Никифоров Владимир Николаевич
Статьи, опубликованные в журнале
Страницы:
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1990
DEEP RADIATION-DEFECT LEVEL IN ELECTRON-IRRADIATED N-TYPE INDIUM-ANTIMONIDE
DMITRIEV VV,
SKIPETROV EP
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 5, с. 564-566
1990
GALVANOMAGNETIC EFFECTS IN P-TYPE PB1-XSNXTE (X=0.2) ALLOY IRRADIATED WITH ELECTRONS
BRANDT NB
,
SKIPETROV EP
,
SLYNKO EI
, KHOROSH AG,
SHTANOV VI
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 1, с. 31-35
1990
INFLUENCE OF PRESSURE ON ELECTROPHYSICAL PROPERTIES OF THE INSULATING PHASE OF ELECTRON-IRRADIATED PB1-XSNXSE (X=0.25)
DUBKOV VP
,
SKIPETROV EP
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 1, с. 63-65
1990
INVESTIGATION OF THE CATHODOLUMINESCENCE SPECTRA OF COPPER-DOPED MONOCLINIC ZINC DIPHOSPHIDE CRYSTALS
Vavilov V.S.
,
Chukichev M.V.
,
Khakimov V.K.
в журнале
Soviet Physics Semiconductors-Ussr
, том 248, № 12, с. 1322-1324
1990
MAGNETOPHONON RESONANCE AND TRANSVERSE BREAKDOWN IN HG1-XCDXTE ALLOYS UNDER PRESSURE
BOGDANOV EV
,
ZASTAVNYI YV
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 3, с. 356-357
1990
MECHANISMS OF FORMATION OF PHOTOINDUCED DEFECTS IN UNDOPED A-SI-H FILMS
ZVYAGIN I.P.
,
KUROVA I.A.
,
MELESHKO N.V.
,
ORMONT N.N.
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 10, с. 1078-1080
1990
MECHANISMS OF FORMATION OF PHOTOINDUCED DEFECTS IN UNDOPED A-SI-H FILMS
ZVYAGIN I.P.
,
KUROVA I.A.
,
MELESHKO N.V.
,
ORMONT N.N.
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 10 , с. 1078-1080
1990
OPTICAL-PROPERTIES OF MNGA2S4 SINGLE-CRYSTALS
Niftiev N.N.
,
Tagiev O.B.
,
Rustamov A.G.
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 4, с. 478-479
1990
Quantum Hall effect and the g factor of 2D electrons in GaAs-based heterostructures
Chudinov S.M.
,
Kul’bachinskii V.A.
,
Mancini G.
,
Medvedev B.K.
,
Rodichev D.Yu
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 11, с. 1185-1188
1990
RESONANCE ENERGY-BAND OF PB1-0.07SN0.07SE ALLOY IRRADIATED WITH ELECTRONS
KOVALEV BB
,
SKIPETROV EP
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 8, с. 866-868
1990
SATURATION OF THE PHOTOCONDUCTIVITY AND CHARACTERISTICS OF ANNIHILATION OF PHOTOSTIMULATED DEFECTS IN UNDOPED A-SI-H
ZVYAGIN I.P.
,
KUROVA I.A.
,
MELESHKO N.V.
,
ORMONT N.N.
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 11, с. 1238-1240
1990
STAEBLER-WRONSKI EFFECT IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
KAZANSKII A.G.
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 8, с. 915-917
1990
TEMPERATURE AND PRESSURE DEPENDENCES OF GALVANOMAGNETIC PROPERTIES OF PBTE(CR) SOLID-SOLUTIONS
KASHIRSKAYA LM,
RYABOVA LI
,
TANANAEVA OI
,
SHIROKOVA NA
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 8, с. 848-850
1990
TEMPERATURE-DEPENDENCE OF THE FERMI LEVEL POSITION IN HYDROGENATED AMORPHOUS N-TYPE SILICON
KAZANSKII A.G.
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 3, с. 349-350
1990
THERMAL QUENCHING OF THE PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON WHICH IS LIGHTLY DOPED WITH BORON
KAZANSKII A.G.
,
MILICHEVICH E.P.
, URAZBAEVA R.A.
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 6, с. 724-725
1990
Theory of hot-electron transport in heterostructure transistors
Ershov M.Yu
,
Zakharova A.A.
,
Ryzhii V.I.
в журнале
Soviet Physics Semiconductors-Ussr
, том 24, № 7, с. 796-800
1989
CONDUCTION OF PB0.75SN0.25TE-IN ALLOYS UNDER THE COMBINED INFLUENCE OF ELECTRIC AND MAGNETIC-FIELDS
AKIMOV BA
,
NIKORICH AV
,
KHOKHLOV DR
,
CHESNOKOV SN
в журнале
Soviet Physics Semiconductors-Ussr
, том 23, № 4, с. 418-421
1989
DYNAMICS OF THE WORKING POINT ON THE FALLING BRANCH OF THE CURRENT-VOLTAGE CHARACTERISTIC OF PB1-XSNX TE-IN ALLOYS
AKIMOV BA
,
KHOKHLOV DR
,
CHESNOKOV SN
в журнале
Soviet Physics Semiconductors-Ussr
, том 23, № 5, с. 565-566
1989
FORMATION OF DEFECTS IN A-SI-H DURING DEHYDROGENATION AND OPTICAL DEGRADATION
KAZANSKII A.G.
, MILICHEVICH E.P.
в журнале
Soviet Physics Semiconductors-Ussr
, том 23, № 11, с. 1253-1255
1989
FORMATION OF ORDERED STRUCTURES ON THE SURFACE OF GAAS AS A RESULT OF PULSED LASER IRRADIATION
KASHKAROV PK
, PETROV VI, PTITSYN DV,
TIMOSHENKO VY
в журнале
Soviet Physics Semiconductors-Ussr
, том 23, № 11, с. 1287-1288
1989
Generation of sound as a result of interaction of laser radiation with the surface of a semiconductor
Zakharova A.A.
,
Ryzhii V.I.
в журнале
Soviet Physics Semiconductors-Ussr
, том 23, № 11, с. 1223-1226
1989
KINETICS OF THE STAEBLER-WRONSKI EFFECT IN UNDOPED A-SI-H FILMS
KUROVA I.A.
,
MELESHKO N.V.
,
ORMONT N.N.
,
LUPACHEVA A.N.
в журнале
Soviet Physics Semiconductors-Ussr
, том 23, № 11, с. 1255-1257
1989
METAL-INSULATOR TRANSITION IN PB1-XMNXTE - IN SOLID-SOLUTIONS
AKIMOV BA
,
NIKORICH AV
,
RYABOVA LI
,
SHIROKOVA NA
в журнале
Soviet Physics Semiconductors-Ussr
, том 23, № 6, с. 636-638
1989
MISFIT STRESSES IN A PB0.93SN0.07SE-PBS0.05SE0.95 HETEROSTRUCTURE
Gaidukov Y.P.
,
Gaskov A.M.
,
Malinskii I.M.
,
Nikiforov V.N.
,
Vasileva O.N.
в журнале
Soviet Physics Semiconductors-Ussr
, том 23, № 11, с. 1299-1300
1989
Mechanism of formation of spatially inhomogeneous structures in semiconductors under the influence of high laser radiation
Zakharova A.A.
,
Ryzhii V.I.
в журнале
Soviet Physics Semiconductors-Ussr
, том 23, № 10, с. 1175-1176
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