Journal of Vacuum Science & Technology B - журнал | ИСТИНА – Интеллектуальная Система Тематического Исследования НАукометрических данных

Journal of Vacuum Science & Technology Bжурнал

Индексирование: Scopus (1 января 2009 г.-), JCR (1 января 2007 г.-), Белый список (20 октября 2022 г.-)

Период активности журнала: 1 января 2009 г.-

История журнала:

2009 г. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures переименован в Journal of Vacuum Science & Technology B

Другие названия журнала: Journal of Vacuum Science & Technology B
Сайт журнала: https://avs.scitation.org/journal/jvb
Издательство: AIP Publishing
Местоположение издательства: United States
Язык: English
Аннотация:
JVSTB is devoted to publishing reports of original research, letters, and review articles on microelectronics and nanotechnology. The scope includes, but is not limited to, the following topics:
- Compound semiconductor electronics and optoelectronics
- Devices for energy conversion and storage;
- Dielectrics in micro- and nanoelectronics
- Dye-sensitized and other excitonic solar cells
- Graphene, carbon nanotubes, and fullerenes: materials & devices
- Group IV semiconductor microelectronics
- Lithography
- Microelectromechanical and nanoelectromechanical systems and devices (MEMS & NEMS)
- Nanometer science and technology
- Nanostructured materials and devices including 2D-materials, nanowires, nanoparticles, and quantum dots
- Organic and molecular electronics
- Photovoltaics based on nanostructured materials
- Plasmonics
- Spintronics and magnetic devices
- Vacuum nanoelectronics, vacuum measurements, and vacuum science and technology
ISSN: 2166-2746 (Print), 2166-2754 (Electronic)

Статьи, опубликованные в журнале

- 2024 Carbonized polyvinylidene difluoride films irradiated by variable-energy Ar+: Tunable morphology and resistive sensing
- Nuriahmetov Islam F., Zavidovskiy Ilya A., Khaidarov Abdusame A., Savchenko Natalya F., Tatarintsev Andrey A., Dremov Viacheslav V., Streletskiy Oleg A.
- в журнале Journal of Vacuum Science & Technology B, издательство AIP Publishing (United States), том 42, № 4, с. 043401 DOI
- 2011 Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors
- Durğun Özben E., Lopes J.M.J, Nichau A., Lupták R., Lenk S., Besmehn A., Bourdelle K.K., Zhao Q.T., Schubert J., Mantl S.
- в журнале Journal of Vacuum Science & Technology B, издательство AIP Publishing (United States), том 29, № 1 DOI