Semiconductor Science and Technologyжурнал

Статьи, опубликованные в журнале

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  • 2022 Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures
  • Torkhov N.A., Gradoboev A.V., Orlova K.N., Toropov A.S.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 37, № 5 DOI
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  • 2021 Charge-neutral nonlocal response in superconductor-InAs nanowire hybrid devices
  • Denisov A.O., Bubis A.V., Piatrusha S.U., Titova N.A., Nasibulin A.G., Becker J., Treu J., Ruhstorfer D., Koblmüller G., Tikhonov E.S., Khrapai V.S.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 36, № 9, с. 09LT04 DOI
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  • 2020 Structural, optical and magnetic properties of a dilute magnetic semiconductor based on Ga-doped
  • Asvarov A.Sh, Butashin A.V., Kanevsky V.M., Muslimov A.E., Perov N.S., A Chiolerio
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 35, с. 1-10 DOI
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  • 2019 Plasma-assisted surface nanostructuring of epitaxial Pb1−x Sn x Te (0 ≤ x ≤ 1) films
  • Zimin S.P., Gorlachev E.S., Amirov I.I., Naumov V.V., Juskenas R., Skapas M., Abramof E., Rappl P.H.O
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 34, № 9, с. 095001 DOI
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  • 2019 Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)
  • Gavrina P.S., Podoskin A.A., Romanovich D.N., Golovin V.S., Veselov D.A., Slipchenko S.O., Pikhtin N.A., Bagaev T.A., Ladugin M.A., Marmalyuk A.A., Simakov V.A.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 34, № 6, с. 065025 DOI
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  • 2017 Surface nanostructuring of CuIn1-x Ga x Se2 films using argon plasma treatment
  • Zimin S.P., Gorlachev E.S., Mokrov D.A., Amirov I.I., Naumov V.V., Gremenok V.F., Juskenas R., Skapas M., Kim W.Y., Bente K., Chung Y.D.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 32, № 7, с. 075014 DOI
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  • 2016 Manifestation of topological surface electron states in photoelectromagnetic effect induced by terahertz laser radiation
  • Galeeva A.V., Egorova S.G., Chernichkin V.I., Tamm M.E., Yashina L.V., Rumyantsev V.V., Morozov S.V., Plank H., Danilov S.N., Ryabova L.I., Khokhlov D.R.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 31, с. 095010-095010 DOI
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  • 2016 TM/TE polarization tuning and switching in tensile strained p-AlGaAs/GaAsP/n-AlGaAs heterostructures by uniaxial compression
  • Bogdanov E.V., Kissel H., Kolokolov K.I., Minina N.Ya
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 31, № 3, с. 035008-1-035008-5 DOI
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  • 2015 Application of abnormally high sputtering rate of PbTe(Te) single crystals during inductively coupled argon plasma treatment for fabrication of nanostructures
  • Zimin S.P., Gorlachev E.S., Amirov I.I., Naumov V.V., Bagiyeva G.Z.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 30, № 3, с. 035017
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  • 2015 Efficient and stable polymer solar cells prepared using plasmonic graphene oxides as anode buffers
  • Ch-Lei Chen, Ming-Kai Chuang, Chyong-Hua Chen, Chih-Wei Chu, Keshtov Muchamed L., Fang-Chung Chen
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 30, с. 1-6 DOI
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  • 2015 Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
  • Bokov P.Yu, Brazzini T., Romero M.F., Calle F., Feneberg M., Goldhahn R.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 30, № 8, с. 085014 DOI
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  • 2015 OPTICAL FEEDBACK IN 905 NM POWER LASER-THYRISTORS BASED ON ALGAAS/GAAS HETEROSTRUCTURES
  • Podoskin A.A., Soboleva O.S., Zakharov M.S., Veselov D.A., Zolotarev V.V., Pikhtin N.A., Tarasov I.S., Slipchenko S.O., Bagaev T.A., Ladugin M.A., Marmalyuk A.A., Simakov V.A.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 30, № 12, с. 125011-125011 DOI
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  • 2012 Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts
  • Kulbachinskii V.A., Yuzeeva N.A., Galiev G.B., Klimov E.A., Vasil’evskii I.S., Khabibullin R.A., Ponomarev D.S.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 27, с. 035021-1-035021-5
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  • 2012 Galvanomagnetic properties and electronic structure of Pb1-x-ySnxVyTe under pressure
  • Skipetrov E.P., Golovanov A.N., Kovalev B.B., Knotko A.V., Slyn'ko E.I., Slyn'ko V.E.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 27, № 1, с. 015019-1-015019-9 DOI
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  • 2012 Monopolar photoelectromagnetic effect in Pb1-xSnxTe(In) under terahertz laser radiation
  • Chernichkin V.I., Ryabova L.I., Nicorici A.V., Khokhlov D.R.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 27, № 3, с. 035011 DOI
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  • 2011 Cyclotron resonance and interband optical transitions in HgTe/CdTe(013) quantum well heterostructures
  • Ikonnikov A.V., Zholudev M.S., Spirin K.E., Lastovkin A.A., Maremyanin K.V., Aleshkin V.Y., Gavrilenko V.I., Drachenko O., Helm M., Wosnitza J., Goiran M., Mikhailov N.N., Dvoretskii S.A., Teppe F., Diakonova N., Consejo C., Chenaud B., Knap W.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 26, № 12, с. 125011 DOI
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  • 2009 Photoconductivity of oxidized nanostructured PbTe(In) films
  • Dobrovolsky A.A., Dashevsky Z.M., Kasiyan V.A., Ryabova L.I., Khokhlov D.R.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 24, № 7, с. 075010 DOI
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  • 2008 Deep impurity levels in vanadium-doped Pb(1-x)Mn(x)Te solid solutions
  • Dobrovolsky A.A., Artamkin A.I., Dziawa P., Story T., Slyn'ko E.I., Slyn'ko V.E., Ryabova L.I., Khokhlov D.R.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 23, № 5, с. 055004 DOI
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  • 2008 Optical absorption of polarized light in InAs/GaSb quantum wells
  • Zakharova A., Semenikhin I., Chao K.A.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 23, № 12 DOI
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  • 2007 Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
  • Kulbachinskii V.A., Vasil'evskii I.S., Lunin R.A., Galistu G., de Visser A., Galiev G.B., Shirokov S.S., Mokerov V.G.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 22, № 3, с. 222-228 DOI
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  • 2006 Interband optical transitions in GaAs modulation-doped quantum wells: Photoreflectance experiment and self-consistent calculations
  • Avakyants L.P., Bokov P.Yu, Chervyakov A.V., Galiev G.B., Klimov E.A., Vasil’evskii I.S., Kulbachinskii V.A.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 21, № 4, с. 462-466 DOI
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  • 2006 Microporous silicon connected with silicon wires
  • Du X.W., Lu Y.W., Kulinich S.A., Sun J., Yao P.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 21, № 4, с. 498-500 DOI
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  • 2003 A NOVEL METHOD OF DETERMINING SEMICONDUCTOR PARAMETERS IN EBIC AND SEBIV MODES OF SEM
  • Zhu S.Q., Yang F.H., Rau E.I.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 18, № 4, с. 361
• • 2003 A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM
  • Shi-Qiu Zhu, Rau and Fu-Hua Yang E.I.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 18, № 14
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  • 2002 Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation
  • Kulbachinskii V.A., Lunin R.A., Rogozin V.A., Mokerov V.G., Fedorov Y.V., Khabarov Y.V., de Visser A.
  • в журнале Semiconductor Science and Technology, издательство IOP Publishing ([Bristol, UK], England), том 17, № 9, с. 947-951 DOI