Graphene oxide reduction by solid-state laser irradiation for bolometric applicationsстатья
Статья опубликована в высокорейтинговом журнале
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 20 марта 2018 г.
Аннотация:We present a method for reduced graphene oxide (GO) patterning on the surface of GO film by a 445 nm solid-state laser with the adjustable fluence from 0.2–20 kJ cm−2. We demonstrate that the optimal argon concentration in air to obtain good quality reduced GO films is 90%. Varying the laser irradiation energy density allows controlling the resistance and I G /I D and I G /I 2D ratios of Raman peak intensities. As a result, we demonstrate the possibility of forming of conductive patterns with a sheet resistance of 189 Ohm/squ and ~1 μm film thickness by a local reduction of the GO. The fabricated structures reveal excellent bolometric response with a high speed and sensitivity to the radiation in the visible wavelength region.