Characterization of carbon contamination under ion and hot atombombardment in a tin-plasma extreme ultraviolet light sourceстатья
Статья опубликована в высокорейтинговом журнале
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 19 октября 2015 г.
Авторы:
Dolgov A.,
Lopaev D.,
Lee C.J.,
Zoethout E.,
Medvedev V.,
Yakushev O.,
Bijkerk F.
Аннотация:Molecular contamination of a grazing incidence collector for extreme ultraviolet (EUV) lithography wasexperimentally studied. A carbon film was found to have grown under irradiation from a pulsed tinplasma discharge. Our studies show that the film is chemically inert and has characteristics that aretypical for a hydrogenated amorphous carbon film. It was experimentally observed that the film consistsof carbon (∼70 at.%), oxygen (∼20 at.%) and hydrogen (bound to oxygen and carbon), along with a fewat.% of tin. Most of the oxygen and hydrogen are most likely present as OH groups, chemically boundto carbon, indicating an important role for adsorbed water during the film formation process. It wasobserved that the film is predominantly sp3 hybridized carbon, as is typical for diamond-like carbon. TheRaman spectra of the film, under 514 and 264 nm excitation, are typical for hydrogenated diamond-likecarbon. Additionally, the lower etch rate and higher energy threshold in chemical ion sputtering in H2plasma, compared to magnetron-sputtered carbon films, suggests that the film exhibits diamond-likecarbon properties.