Semiconductor Photoelectrochemical Photographic Device Based on Cadmium Selenideстатья
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Дата последнего поиска статьи во внешних источниках: 6 декабря 2018 г.
Аннотация:A semiconductor photoelectrochemical photographic device (SPEPD) having as high as 107-108 cm2/] sensitivity was developed using vacuum evaporated thin films of CdSe on Sn02-glass substrates as photoelectrodes and polyacrylamide gel films containing electrochromic components as an image recording layer. Photographic characteristics of SPEPD were investigated under both cathodic and anodic polarization of the photoelectrode with different electrochromic and model recording layers. The effect of photoelectrochemical corrosion of the photoelectrode on such characteristics was estimated and a method of electrode protection was suggested.