Phase Transition and Electrical Properties of Gallium- and Indium-Doped Bi10Ti3W3O30статья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Polycrystalline samples of gallium- and indium-doped Bi10Ti3W3O30 (mixed-layer Aurivillius phase with the Ti4+ and W6+ distributed at random over the perovskite-like slabs) have been prepared by solid-state reactions, and their polymorphism and electrical properties have been studied. Doping with both In3+ and Ga3+ yields limited solid solutions and shifts the ferroelectric phase transition to lower temperatures. The heterovalent substitutions of In3+ and Ga3+ for Ti4+ and W6+ increase the oxygen vacancy concentration and, accordingly, the conductivity of the material relative to the undoped compound.