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Photoconductive antennas based on epitaxial films In0.5Ga0.5As on GaAs (1 1 1)A and (1 0 0)A substrates with a metamorphic bufferстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 6 сентября 2018 г.
- Авторы: Kuznetsov K.A., Galiev G.B., Kitaeva G.Kh, Kornienko V.V., Klimov E.А., Klochkov A.N., Leontyev A.A., Pushkarev S.S., Maltsev P.P.
- Журнал: Laser Physics Letters
- Том: 15
- Номер: 7
- Год издания: 2018
- Издательство: Wiley - VCH Verlag GmbH & CO. KGaA
- Местоположение издательства: Germany
- Первая страница: 076201
- DOI: 10.1088/1612-202X/aac7bb
- Аннотация: The terahertz (THz) wave generation by the spiral photoconductive antennas fabricated on the low-temperature and high-temperature grown undoped and Si-doped In0.5Ga0.5As films is studied by the terahertz time-domain spectroscopy method. The In0.5Ga0.5As layers were grown by molecular beam epitaxy on GaAs substrates with (1 0 0) and (1 1 1) A crystallographic orientations utilizing step-graded InxGa1−xAs metamorphic buffer. The antennas are excited by radiation of Er3+-fiber laser at 1.56 μm wavelength in two regimes: with pulse durations of 2.5 ps or 100 fs. It is found that the THz wave generation is 3–4 times more effective in the case of InGaAs-based antennas on (1 1 1)A GaAs substrates as compared to the (1 0 0) substrates. Power-voltage characteristic of the LT-InGaAs antenna up to and beyond threshold breakdown voltage are reported.
- Добавил в систему: Кузнецов Кирилл Андреевич