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EFFECT OF DEUTERIUM ON THIN-FILM FORMATION DURING TUNGSTEN SPUTTERING IN MAGNETRON DISCHARGE DEUTERIUM PLASMAстатья
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 20 апреля 2016 г.
- Авторы: Sharapov V.M., Zalavutdinov R.K., Zimin A.M., Krivitsky S.E., Serushkin S.V., Kulikauskas V.S.
- Журнал: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
- Том: 9
- Номер: 4
- Год издания: 2015
- Издательство: Pleiades Publishing, Ltd
- Местоположение издательства: Road Town, United Kingdom
- Первая страница: 673
- Последняя страница: 678
- DOI: 10.1134/S1027451015040187
- Аннотация: The features of the formation of tungsten-deuterium films on a silicon substrate during the sputtering of a tungsten target in magnetron discharge deuterium plasma are studied. Scanning electron microscopy reveals the presence of blistered regions on the surface of the film; the concentration of these regions depends on the target-substrate distance. This distance is also responsible for the concentration of deuterium trapped in the films, which is determined by elastic recoil detection analysis. It is assumed that the deuterium retained by the film is located in pores and surface blisters that form the observed bulged regions. A possible cause of the formation of blisters and pores is the low solubility of deuterium in the Si substrate and the W film.
- Добавил в систему: Куликаускас Вацловас Станиславович