Reaction-diffusion optoelectronics based on dispersed semiconductorsстатья
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Дата последнего поиска статьи во внешних источниках: 16 февраля 2016 г.
Аннотация:Since many dispersed semiconductors are capable of light energy conversion and possess photocatalytic and luminescent properties, and any discreet light-sensitive medium can be applied for the positional-sensitive light flux registration (similar to pixels and voxels in semiconductor-based image recording), the use of chemically active dispersed semiconductors allows to perform a direct signal / image registration based on light-sensitive reaction-diffusion redox systems without conventional CCD / CMOS devices. The image capturing in this case will correspond to the formation of the metastable dissipative structures in the active medium, with their morphological properties determined by the flux gradient and provided by the corresponding dispersed semiconductor medium sensitivity.