The Special Features of the Frequency Dependence of Phononless Hopping Conductionстатья
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Дата последнего поиска статьи во внешних источниках: 11 декабря 2015 г.
Аннотация:Within the framework of perturbation theory the imaginary part of the phononless conduction of a lightly doped compensated semiconductor is calculated. It is shown that when the basis of localized atomiclike functions is used, the superlinear frequency dependence of the real part of the conduction corresponds to the approximately linear frequency dependence of the imaginary part of the conductivity. It has been found that at frequencies below the transition (crossover) frequency ωcr from the linear to quadratic frequency dependence of the real part of conductivity, the dielectric loss tangent depends weakly on the frequency and it is determined by the relationship of hωcr to the width of the impurity band. It is shown that measurements
of the dielectric loss tangent can provide information on the localization radius of impurity states.