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A non-destructive, fast evaluation of PVD diffusion barriers deposited on porous low-k dielectricsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 4 октября 2018 г.
- Авторы: Yingjie Wang, Peng He, Jing Zhang, Jiang Yan, Lopaev D.V., Xin-Ping Qu, Baklanov M.R.
- Журнал: Microelectronic Engineering
- Том: 198
- Год издания: 2018
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 22
- DOI: 10.1016/j.mee.2018.06.006
- Аннотация: Non-destructive and fast evaluation of thin diffusion barriers deposited on top of porous low-k dielectrics by spectroscopic ellipsometry is demonstrated. Studying Physical Vapor Deposited (PVD) CoTa and CoW alloys has shown that 3 nm and 5 nm thick barriers still have holes sufficient for penetration of neutral molecules. This study also detected damage to OSG low-k films which occurs during barrier deposition. VUV light emitted by Ar plasma which is used for metal target sputtering is likely to have caused this damage. For this reason, low-k films were placed under the barriers in order to adsorb moisture during air storage. W atoms also penetrated pores of low-k film during the deposition phase.
- Добавил в систему: Лопаев Дмитрий Викторович