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Evidence for strong electron–phonon interaction from inelastic tunneling of Cooper pairs in c-direction in Bi 2Sr 2CaCu 2O 8 break junctionsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: EVIDENCE FOR E.B., Sudakova M.V., Tchesnokov S.N., Shabalin M.E., Lorenz M.A., Hein M.A., Müller G., Piel H., Solid State Communications Aminov B.A.
- Журнал: Solid State Communications
- Том: 111
- Номер: 9
- Год издания: 1999
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 513
- Последняя страница: 518
- DOI: 10.1016/S0038-1098(99)00168-4
- Аннотация: A reproducible fine structure at subgap voltages in the I(U)-characteristics of Bi2Sr2CaCu2O8 break junctions has been observed and investigated. The structure is detectable only in the presence of an a.c. Josephson current. The position of the dips, composing the structure in the dI/dU-characteristics, is independent of the gap parameter Δ, the temperature T and the geometry of the contacts. The overall form of the fine structure is in good agreement with the Raman scattering spectra of the phonon modes in this material. We attribute this structure to an inelastic (phonon assisted) tunneling of Cooper pairs, which is accompanied by the emission of coherent Raman-active optical phonons at resonance voltages Ures=ℏωphon/2e. These results hint for strong electron–phonon interaction in this material.
- Добавил в систему: Судакова Марина Владимировна