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On the Nature of Photo-Induced Defects and Recombination Mechanisms in light-soaked a-Si:H filmsтезисы доклада
- Авторы: Zvyagin I.P., Kurova I.A., Ormont N.N.
- Сборник: 15th International Conf.of Amorphous Semiconductors.ICAS15
- Тезисы
- Год издания: 1993
- Место издания: Cambridge
- Первая страница: 254
- Последняя страница: 257
- Аннотация: Results of measurements of the temperature dependence of the photocoductivity and intensity-current characteristics of undoped a-Si:H films light-soaked at various temperatures are presented. The observations support the assumption of the introduction of t-centers in addition of the conventional dangling bonds playing an important role in the recombination. The electronic energy spectrum and recombination properties of intimate dangling-bond pairs are discussed and it is argued that such complexes may be the t-centers introduced at light soaking.
- Добавил в систему: Ормонт Наталия Николаевна