Influence of growth medium composition on the incorporation of boron in HPHT diamondстатья
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Дата последнего поиска статьи во внешних источниках: 1 декабря 2018 г.
Аннотация:Influence of growth medium composition on the efficiency of boron doping of carbonado-like diamond at 8–9 GPa was studied by diluting the C-B growth system with metallic solvents of carbon, Co and Ni. Addition of these metals to the original system leads to a decrease in the synthesis temperature, degree of doping with boron and suppression of superconductivity in diamond. According to XPS analysis, content of substitutional boron is equal to 0.07, 0.16 and 0.39 at.% in diamonds obtained in Co-C-B, Ni-C-B and C-B growth systems, respectively. Metallic behavior at normal temperatures and superconductivity below 5 K in diamond, synthesized in C-B system, change to semiconducting character of conductivity down to 2 K in diamonds obtained in the diluted systems; a faint hint of superconducting transition at 2 K was detected in the case of diamond grown in Ni-C-B system. By comparing phase composition of the inclusions and the doping efficiency of the diamonds, we are able to suggest that high chemical affinity of boron to boride-forming metals hinders the boron doping of diamond. The heavily boron-doped carbonado-like diamond compacts demonstrate high electrochemical activity in aqueous solutions and can be used as miniature electrodes in electrosynthesis and electroanalysis.