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A novel quasi-one-dimensional topological insulator in bismuth iodide β-Bi4I4статья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 25 апреля 2017 г.
- Авторы: Gabriel Autès, Anna Isaeva, Luca Moreschini, Johannsen Jens C., Andrea Pisoni, Ryo Mori, Wentao Zhang, Filatova Taisia G., Kuznetsov Alexey N., László Forró, Wouter Van_den_Broek, Yeongkwan Kim, Kim Keun Su, Alessandra Lanzara, Denlinger Jonathan D., Eli Rotenberg, Aaron Bostwick, Marco Grioni, Yazyev Oleg V.
- Журнал: Nature Materials
- Том: 15
- Год издания: 2016
- Издательство: Nature Publishing Group
- Местоположение издательства: United Kingdom
- Первая страница: 154
- Последняя страница: 158
- DOI: 10.1038/nmat4488
- Аннотация: Recent progress in the field of topological states of matter1, 2 has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs; refs 3,4,5,6), followed by closely related ternary compounds7, 8, 9, 10, 11, 12, 13, 14, 15, 16 and predictions of several weak TIs (refs 17,18,19). However, both the conceptual richness of Z2 classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z2 topological insulator is theoretically predicted and experimentally confirmed in the β-phase of quasi-one-dimensional bismuth iodide Bi4I4. The electronic structure of β-Bi4I4, characterized by Z2 invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Our angle-resolved photoemission spectroscopy measurements performed on the (001) surface reveal a highly anisotropic band-crossing feature located at the point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction.
- Добавил в систему: Кузнецов Алексей Николаевич