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Light absorption and photoluminescence of porous siliconстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Obraztsov A.N., Karavanskii V.A., Okushi H., Watanabe I.I.
- Журнал: Semiconductors
- Том: 32
- Номер: 8
- Год издания: 1998
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 896
- Последняя страница: 900
- DOI: 10.1134/1.1187480
- Аннотация: The results of an experimental study of Raman scattering, photoluminescence, and light absorption and reflection in porous silicon layers obtained by electrochemical etching of single-crystal wafers are presented. It is concluded on the basis of an analysis of the experimental data that the centers responsible for radiative and nonradiative recombination in this material are of a multiple character, The experimental data show that the centers whose maximum of optical excitation lies in the blue-green region of the spectrum have a uniform distribution, in contrast with the centers whose region of efficient excitation lies in the red region of the spectrum. The radiative recombination efficiency of the latter increases in a thin, near-surface layer of a porous-silicon film. (C) 1998 American Institute of Physics.
- Добавил в систему: Образцов Александр Николаевич