Lifetime control of silicon devices by proton and carbon implantation

Lagov, P.B.; Kulevoi, T.V.; Maslovsky, V.M.; Andreev, D.V.; Volkov, A.N.

Авторы: Lagov P.B., Kulevoi T.V., Maslovsky V.M., Andreev D.V., Volkov A.N.
Сборник: XII-th International Conference Ion Implantation And Other Applications Of Ions And Electrons 18–21 June 2018
Тезисы
Год издания: 2018
Место издания: Kazimierz Dolny, Poland
Первая страница: 106
Последняя страница: 106
Аннотация: Many silicon devices, including high-power MOS transistors, require to apply technologies to control the lifetime of minor charge carriers (tr). As a result, one utilizes thermodiffusion, radiation, and combined methods. In practice the most widely utilized method is a treatment by accelerated electrons and protons. The accelerated electrons allow to form electrically active defects at the treatment of few wafers, located as few layers, relatively uniformly. The protons allow to implement a local formation of hidden recombinational layers inside of device layers at significant depth which is especially important for deep diffusion structures [1]. However, for a great number of device structures, especially for epitaxial structures, it is required to form hidden recombinational layers with thickness of 1–2 μm at depth of no more than 20 μm. As a result, in the paper we research a possibility to utilize carbon ions for such aims. As advantages of the carbon implantation one considers the following: carbon in high concentrations is presented in silicon (~1016 cm-3) and, thus, low dose implantation does not affect on dopant profile of the initial material; at the same time high-vacancy complexes are characterized by higher thermal stability. The results indicate about higher thermal stability of recombination centers formed at the carbon implantation. References [1] Lagov P.B, Drenin A.S, Zinoviev M.A., Journal of Physics 2017;830:012152.
Добавил в систему: Лагов Петр Борисович

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