TM/TE polarization tuning and switching in tensile strained p-AlGaAs/GaAsP/n-AlGaAs heterostructures by uniaxial compressionстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 20 апреля 2016 г.
Аннотация:Numerical calculations and experimental results show that, for the broad range of tensile strained p-AlGaAs/GaAsP/n-AlGaAs heterostructures widely used in commercial laser diodes emitting at 766 – 808 nm, polarization of emitted light may be extremely sensitive to external uniaxial stress due to the change of wave functions symmetry and possible optical transitions in the quantum well levels system. In some heterostructures with quantum well width of 10 nm and phosphorus content below 0.08, TM/TE polarization mode relation showcases a several times decrease and even dominant polarization mode switching under moderate compression of about 5 - 6 kbar in [100] and [110] directions.