Modification of optoelectronic properties of porous silicon produced in an electrolyte based on heavy waterстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The methods of infrared spectroscopy, electron spin resonance, and photoluminescence were used to study the porous-silicon layers formed by electrochemical treatment of Si in an HF : D2O solution. In contrast with the samples prepared in a conventional electrolyte (HF : H2O), a steady increase in the photoluminescence intensity in the course of routine oxidation of the sample was observed, with the hydrogen coverage of the silicon-skeleton surface retained. A mechanism for anomalous oxidation of the layers of porous silicon obtained in a mixture of HF and heavy water is suggested. (C) 2000 MAIK "Nauka/Interperiodica".