Effect of local surface structure on electronic properties of hydrogenated silicon surfacesстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Morphology and electronic properties of hydrogenated Si surfaces are studied by scanning tunneling microscopy and by methods of surface photovoltage and photoluminescence (PL), respectively. The microscopic roughness on the nm scale is more important than the macroscopic roughness of a hydrogenated Si surface for the densities of nonradiative surface defects and hole traps. The adsorption of water or oxygen molecules on a hydrogenated Si surface leads to an increase of the intensity of interband PL of c-Si which is controlled by surface nonradiative recombination. This effect is interpreted as a decrease of the recombination cross section of a nonradiative surface defect due to charge trapped at the adsorbed molecules.