Light and electric field influence on resistivity and long-term relaxations of piezoresistivity in p-GaAs/Al0.5Ga0.5As heterostructures

Авторы: Bogdanov E.V., Hansen O.P., Kolokolov K.I., Kravchenko V.N., Minina N.Ya, Olsen J.S., Savin A.M.
Сборник: Proceedings of SPIE - The International Society for Optical Engineering
Год издания: 1997
Первая страница: 68
Последняя страница: 72
Аннотация: The influence of light illumination and high electric field pulses on the long-term relaxation effect in piezoresistivity which has been discovered recently in p-GaAs/Al0.5Ga0.5As heterostructures has been investigated. Significant acceleration of relaxation processes has been observed under the carriers heating by different external sources (light illumination and high electric field). This means that these phenomena are mostly determined by nonequilibrium processes in electron system. At 4.2 K under high electric fields (E > 200 V/cm) switching of the samples to long-term high-resistance state has been also found.
Добавил в систему: Минина Наталья Яковлевна

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