Influence of the nature and density of defects on the thermodynamic and electrical properties of semiconductor materialsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:This paper examines the use of coulometric titration in studies of the nonstoichiometry, defect structure, and thermodynamic properties of semiconductor materials and also for doping of a number of chalcogenides with lead, copper, and germanium. A direct relationship is established between the thermodynamic and electrical properties of the binary compound semiconductors Pb(1 +/- delta)X (X = S, Se, Te), Cu(2 +/- delta)Se, and Cd(2 +/- delta)Se and the ternary spinel semiconductors Cd(1 - delta)Cr(2)Se(4) and Cu(1 +/- delta)Cr(2)S(4) within their homogeneity ranges. The width and symmetry of the homogeneity range of these semiconductor materials are determined using coulometric titration in combination with emf and electrical conductivity measurements. Electrochemically doped nonstoichiometric copper selenide samples are shown to have compositions in the range Cu(1.27)Se-Cu(2.73)Se.