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Diamond growth on WC-Co substrates by hot filament chemical vapor deposition: Effect of filament-substrate separationстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Wei Qiuping, Ashfold Michael N.R., Mankelevich Yu A., Yu Z.M., Liu P.Z., Ma L.
- Журнал: Diamond and Related Materials
- Том: 20
- Номер: 5-6
- Год издания: 2011
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 641
- Последняя страница: 650
- DOI: 10.1016/j.diamond.2011.02.017
- Аннотация: Polycrystalline diamond films have been grown by hot filament (HF) chemical vapor deposition on WC-Co bar substrates using different CH4/H-2 source gas mixing ratios and two different total gas pressures. Each substrate was mounted so as to span a range of HF-substrate separations, d(f), (and thus substrate temperatures) and therefore samples a spread of incident gas phase chemistry and compositions. Spatially resolved scanning electron microscopy and Raman analysis of the deposited material provides a detailed picture of the evolution of film morphology, growth rate, sp(3)/sp(2) content and stress with df in each deposited sample, and of how these properties vary with process conditions. The experimental study is complemented by two-dimensional model calculations of the HF-activated gas phase chemistry and composition, which succeeds in reproducing the measured growth rates well. (C) 2011 Elsevier B.V. All rights reserved.
- Добавил в систему: Манкелевич Юрий Александрович