Аннотация:In this work authors present the results of the fabrication technology development and the experimental study of silicon nanowire field effect transistor (NW FET) as a potential sensor for application in biology and medicine. The original fabrication technology used silicon-on-insulator (SOI) material and did not involve Si doping and activation processes. Current-voltage characteristics of the experimental structures were measured in a buffer
solutions over a wide range (0 - 10 V) of the gate voltages. The possibility of using of the silicon NW FET as a sensitive field/charge sensor was demonstrated by pH measurements, Protein G antibody and antibody-antigen (transferrin) affine interaction measurements.