Kinetics of the photoconductivity in PbTe(Ga)статья
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Аннотация:A phenomenological description is given of the kinetics of the photoconductivity of high-resistivity PbTe(Ga) single crystals as a result of exciting the samples by bombarding them with infrared radiation from pulsed and thermal continuous sources. It is shown that the metastable electronic states, whose levels lie similar to 20 meV below the bottom of the conduction band, contribute significantly to the photoelectric phenomena. The existence of these states has been confirmed by investigations of the characteristic features of the static current-voltage characteristics, thermally-stimulated currents, and induced impurity photoconductivity. A model for the energy spectrum and impurity states in PbTe(Ga) is proposed. This model makes it possible to describe the general features of the experimental data. (C) 1995 American Institute of Physics.