Аннотация:High-resistivity Pb1-xMnxTe:Ga(x less-than-or-similar-to 0.05) single crystals were synthesized. The temperature dependences of the electrical resistivity-rho showed that not only the band gap epsilon-g, but also the activation energy epsilon-A of the extrinsic conduction processes in Pb1-xMnxTe:Ga increased on increase in x and for crystals with C(Mn) almost-equal-to 2.5 at. % reached epsilon-g almost-equal-to 370 and epsilon-A = 250 meV. The maximum in the photoconductivity spectra shifted toward shorter wavelengths. The residual (delayed) photoconductivity was observed in the temperature range T less-than-or-similar-to 70 K. An increase in the Mn content in crystals accelerated relaxation to the equilibrium state after the end of continuous low-temperature illumination.