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ENERGY-SPECTRUM AND PHOTOCONDUCTIVITY OF PB1-XMNXTE-GA SOLID-SOLUTIONSстатья
Информация о цитировании статьи получена из
Web of Science
Дата последнего поиска статьи во внешних источниках: 29 мая 2015 г.
- Авторы: AKIMOV BA, BELOKON SA, DASHEVSKII ZM, EGOROV KN, LAKEENKOV VM, NIKORICH AV, RYABOVA LI
- Журнал: Soviet Physics Semiconductors-Ussr
- Том: 25
- Номер: 2
- Год издания: 1991
- Первая страница: 152
- Последняя страница: 154
- Аннотация: High-resistivity Pb1-xMnxTe:Ga(x less-than-or-similar-to 0.05) single crystals were synthesized. The temperature dependences of the electrical resistivity-rho showed that not only the band gap epsilon-g, but also the activation energy epsilon-A of the extrinsic conduction processes in Pb1-xMnxTe:Ga increased on increase in x and for crystals with C(Mn) almost-equal-to 2.5 at. % reached epsilon-g almost-equal-to 370 and epsilon-A = 250 meV. The maximum in the photoconductivity spectra shifted toward shorter wavelengths. The residual (delayed) photoconductivity was observed in the temperature range T less-than-or-similar-to 70 K. An increase in the Mn content in crystals accelerated relaxation to the equilibrium state after the end of continuous low-temperature illumination.
- Добавил в систему: Рябова Людмила Ивановна