Scanning tunneling microscopy of the nonequilibrium interaction of impurity states at semiconductor surfacesстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Interaction of two localized impurity states of Si atoms at a GaAs surface was studied by scanning tunneling microscopy and spectroscopy. The effects of a twofold "switching" on and off of the states of each of the interacting atoms, the tunneling-interaction-induced mutual level pulling of these states, and the level stabilization near E-F were observed. These effects are explained in terms of the extended Anderson model. (C) 2000 MAIK "Nauka/ Interperiodica".