Vertical electron transport in short intentionally disordered superlattices in finite electric fieldстатья
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Дата последнего поиска статьи во внешних источниках: 27 мая 2015 г.
Аннотация:Vertical electron transport in semiconductor superlattices with a disorder intentionally introduced into their parameters is studied theoretically. Short superlattices with transparent barriers at low temperatures and in finite electric field are considered. Electron transmission spectra and current-voltage characteristics are calculated numerically for various degrees of the disorder. An analysis of observed peculiarities of the characteristics is given in terms of electron tunneling through quasi-localized states within the superlattice.